npn TIP35-a-b-c 04/10/2012 comset semiconductors 1 | 4 semiconductors silicon power transistors they are pnp power transistors mounted in jedec to-3pn. they are intended for use in general purpose power amplifier and switching applications. pnp complements are tip36-a-b-c compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP35 40 v TIP35a 60 TIP35b 80 TIP35c 100 v ceo collector-emitter voltage TIP35 40 v TIP35a 60 TIP35b 80 TIP35c 100 v ebo emitter-base voltage TIP35 5 v TIP35a TIP35b TIP35c i c collector current TIP35 25 a TIP35a TIP35b TIP35c i cm collector peak current TIP35 40 a TIP35a TIP35b TIP35c
npn TIP35-a-b-c 04/10/2012 comset semiconductors 2 | 4 semiconductors absolute maximum ratings symbol ratings value unit i b base current TIP35 5 a TIP35a TIP35b TIP35c p c power dissipation @ t c < 25 TIP35 125 watts TIP35a TIP35b TIP35c @ t a < 25 TIP35 3.5 TIP35a TIP35b TIP35c t j junction temperature TIP35 150 c TIP35a TIP35b TIP35c t s storage temperature range TIP35 -65 to +150 TIP35a TIP35b TIP35c thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base TIP35 1 c/w TIP35a TIP35b TIP35c r thj-a from junction to ambient in free air TIP35 35.7 c/w TIP35a TIP35b TIP35c
npn TIP35-a-b-c 04/10/2012 comset semiconductors 3 | 4 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i ces collector cutoff current i e = 0, v ce = v ceo TIP35 - - 0.7 ma TIP35a TIP35b TIP35c i ceo collector cutoff current i b = 0, v ce = 30v TIP35 - - 1 ma TIP35a i b = 0, v ce = 60v TIP35b - - 1 TIP35c i ebo emitter cutoff current v eb = 5 v, i c = 0 TIP35 - - 1 ma TIP35a TIP35b TIP35c v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 TIP35 40 - - v TIP35a 60 - - TIP35b 80 - - TIP35c 100 - - v ce(sat) collector-emitter saturation voltage (*) i c = 15 a, i b = 1.5 a TIP35 - - 1.8 v TIP35a TIP35b TIP35c i c = 25 a, i b = 5 a TIP35 - - 4 v TIP35a TIP35b TIP35c v be(on) base-emitter voltage (*) i c = 15 a, v ce = 4 v TIP35 - - 2 v TIP35a TIP35b TIP35c i c = 25 a, v ce = 4 v TIP35 - - 4 v TIP35a TIP35b TIP35c h fe dc current gain (*) v ce =4 v, i c = 1.5 a TIP35 25 - - - TIP35a TIP35b TIP35c v ce = 4 v, i c = 15 a TIP35 15 - 75 TIP35a TIP35b TIP35c (*) pulse width 300 s, duty cycle 2.0%
npn TIP35-a-b-c 04/10/2012 comset semiconductors 4 | 4 semiconductors symbol ratings test condition(s) min typ max unit f t current gain- bandwidth product v ce = 10 v, i c = 10 a f= 1khz TIP35 3 - - mhz TIP35a TIP35b TIP35c mechanical data case to3pn n on isolated plastic package september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter case : collector
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